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The electrical characterization and ammonia vapor (NH₃) response of a p‐Si/n‐poly[benzimidazobenzophenanthroline] (n‐BBL) thin‐film junction diode are reported. The presence of a depletion layer at the n‐BBL/p‐Si interface is verifiedviacapacitance–voltage measurements, and the built‐in potential is ≈1.8 V. Using the standard diode equation for data analysis, the turn‐on voltage, rectification ratio, and ideality parameter are found to be 2 V, 16, and 6, respectively. The diode is also tested in the presence of NH₃vapor where it retained its asymmetricJ–Vbehavior with increased currents and an insignificant change in device parameters. NH₃is believed to interact with the adsorbed O₂⁻species on the n‐BBL surface liberating electrons that enhance the diode current. The response time, recovery time, and sensitivity of the diode are 65 s, 121 s, and 52%, respectively. The removal of the gas restores the diode characteristics to their near original shape making it reusable. The diode is also electrically characterized as a function of temperature and is found to retain its rectifying behavior down to 150 K. The rectifying and gas‐sensing features make the diode multifunctional, which expands the range of applications of this ladder‐type conducting polymer.

 

This work explored the fabrication of poly(lactic acid) and poly(triarylamine) nanofibers at concentrations <10 wt% suitable for electronic applications. A diode with a p–n junction shows a half-wave rectification efficiency of 15%.

 

In this study, morphology and in vitro response of electroconductive composite nanofibers were explored for biomedical use. The composite nanofibers were prepared by blending the piezoelectric polymer poly(vinylidene fluoride–trifluorethylene) (PVDF-TrFE) and electroconductive materials with different physical and chemical properties such as copper oxide (CuO), poly(3-hexylthiophene) (P3HT), copper phthalocyanine (CuPc), and methylene blue (MB) resulting in unique combinations of electrical conductivity, biocompatibility, and other desirable properties. Morphological investigation via SEM analysis has remarked some differences in fiber size as a function of the electroconductive phase used, with a reduction of fiber diameters for the composite fibers of 12.43% for CuO, 32.87% for CuPc, 36.46% for P3HT, and 63% for MB. This effect is related to the peculiar electroconductive behavior of fibers: measurements of electrical properties showed the highest ability to transport charges of methylene blue, in accordance with the lowest fibers diameters, while P3HT poorly conducts in air but improves charge transfer during the fiber formation. In vitro assays showed a tunable response of fibers in terms of viability, underlining a preferential interaction of fibroblast cells to P3HT-loaded fibers that can be considered the most suitable for use in biomedical applications. These results provide valuable information for future studies to be addressed at optimizing the properties of composite nanofibers for potential applications in bioengineering and bioelectronics. 

Charge transport in ferroelectric (FE) gated graphene far from the Dirac point (DP) was studied in the temperature range 300 K < T < 350 K. A non-monotonic/monotonic/non-monotonic behavior in the conductivity [σ(T)] was observed as one moved away from the DP. As the gate polarization increased, additional impurity charges were compensated, which reduced charge scattering. The uncompensated charges doped graphene and σ(T) switched to a monotonic increase with increasing T. However, far from the DP, the polarization reached saturation, which resulted in still lower impurity charge scattering. The carrier concentration increased, and a non-monotonic response in σ(T) reappeared, which was attributed to phonon scattering. A theoretical model is presented that combined impurity charge and phonon scattering conduction mechanisms. The top gate polarizable FE provided a novel approach to investigate charge transport in graphene via controlled compensation of impurity charges, and in the process revealed non-monotonic behavior in σ(T) not previously seen in SiO 2 back gated graphene devices. 

Charge transport in electrostatically doped poly[benzimidazobenzophenanthroline]‐BBL thin films in a field‐effect transistor geometry were investigated in the temperature range 150 K < T < 370 K. At low temperatures activation and hopping transport mechanisms dominated, while phonon scattering dominated at high temperatures. The activation energies (E_A) were found to lie in the range 140 meV < E_A < 400 meV implying the existence of deep traps within the polymer bandgap of 1.8 eV. Two quasi‐linear dependencies ofE_Aon the gate voltage (V_g) were observed withE_Adecreasing asV_gincreased. An unexpected “metallic‐like” transport characteristic appeared forT > 335 K which depended onV_g. Enhanced electron delocalization combined with increased carrier density could be responsible for this “metallic‐like” behavior. Our results show that the existence of deep traps with multiple energy distributions, combined with increased carrier density led to the unusual temperature dependence of charge transport observed in BBL.